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- W1992050919 abstract "sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I–V and C–V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs) fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I–V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal–semiconductor field-effect transistors (MESFETs), and SiC static induction transistors (SITs). The parameters of the diodes are extracted from the forward I–V and C–V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance Rs are 11.9 and 1.0 kΩ respectively. The values of barrier height ϕB of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I–V method and 1.14 and 0.93 eV obtained by the C–V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C–V testing results." @default.
- W1992050919 created "2016-06-24" @default.
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- W1992050919 date "2010-01-01" @default.
- W1992050919 modified "2023-09-23" @default.
- W1992050919 title "Characterization of ion-implanted 4H-SiC Schottky barrier diodes" @default.
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- W1992050919 doi "https://doi.org/10.1088/1674-1056/19/1/017203" @default.
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