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- W1992078341 abstract "An anomalous inversion channel was formed in the enhancement-mode InP metal-Al2O3-semiconductor field effect transistor (MISFET) after the gate voltage VG returned from a negative to zero voltages. The channel formation was checked by the drain current measurement and electron beam induced current image pattern observation. The anomalous inversion channel current ID strongly depended on the preceding gate bias amplitude (VG<0) and the biasing time. The current ID then gradually decreased down to zero. Contrasting to this, InP MISFET fabricated by using in situ HCl vapor etching technique for surface cleaning never showed such an inversion formation. The observed anomalous inversion formation in the conventional InP MISFET was consistently explained by a trap model that a number of donor-type traps locate inside the InP native oxide layer with the energy below the Fermi level EF and ionization of them via electron detrapping during a negative VG application induces the inversion channel electrons when VG returns to zero. Based on the simple analysis, the trap concentration and the energy were estimated to be 1.3×1019 cm−3 and 0.42 eV below EF, respectively." @default.
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- W1992078341 date "1982-10-01" @default.
- W1992078341 modified "2023-09-23" @default.
- W1992078341 title "Anomalous inversion channel formation in enhancement‐mode InP metal‐insulator‐semiconductor field effect transistors" @default.
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- W1992078341 doi "https://doi.org/10.1063/1.330003" @default.
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