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- W1992078689 abstract "The carrier mobility of pentacene thin-film transistor is studied by passivating the surface of its SiO2 gate dielectric in NH3 at different temperatures, namely, 900, 1000, 1100, and 1150 °C. Measurements demonstrate that the higher the annealing temperature, the higher the carrier mobility of the OTFT is. The device annealed at 1150 °C has a field-effect mobility of 0.74 cm2/V s, which is 35% higher than that of the device annealed at 900 °C. Energy-dispersive x-ray analysis, scanning-electron microscopy, and atomic-force microscopy show that the higher carrier mobility should be due to more nitrogen incorporated at the gate-dielectric surface which results in more passivated dielectric surface and larger pentacene grains for carrier transport." @default.
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- W1992078689 date "2008-12-01" @default.
- W1992078689 modified "2023-10-03" @default.
- W1992078689 title "Correlation between carrier mobility of pentacene thin-film transistor and surface passivation of its gate dielectric" @default.
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- W1992078689 doi "https://doi.org/10.1063/1.3040004" @default.
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