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- W1992106317 abstract "We study the low-temperature magnetoresistance in thin, high-quality MnAs layers on GaAs. The ordinary Hall effect depends sensitively on the epitaxial orientation of the MnAs layer. We use a simplified model to interpret the sign reversal of the Hall resistivity as a function of the magnetic field together with the large positive magnetoresistivity. For ${A}_{0}ensuremath{-}mathrm{o}mathrm{r}mathrm{i}mathrm{e}mathrm{n}mathrm{t}mathrm{e}mathrm{d}$ MnAs films with the c axis oriented in the plane, we conclude that the low-temperature carrier transport is dominantly holelike at zero magnetic fields, which then undergoes a transition to mixed holelike and electronlike conductivity at high magnetic fields. MnAs films with an out-of-plane oriented c axis show a mixed carrier conductivity already at zero magnetic fields. The possible influence of interface/surface scattering in high-quality MnAs layers on the transfer of holelike to electronlike conductivity is discussed." @default.
- W1992106317 created "2016-06-24" @default.
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- W1992106317 date "2003-03-04" @default.
- W1992106317 modified "2023-09-27" @default.
- W1992106317 title "Ordinary Hall effect in MBE-grown MnAs films grown on GaAs(001) and GaAs(111)B" @default.
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- W1992106317 doi "https://doi.org/10.1103/physrevb.67.113301" @default.
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