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- W1992170744 abstract "This paper presents a device-circuit co-design approach to achieve a low swing, high speed 1.2-5 V level shifter (LS) using drain extended MOS (DeMOS) transistors for system on chip applications in advance CMOS technologies. Limiting factors of the high-voltage devices during transients are identified and accordingly it is shown that the maximum operating frequency of traditional LS can be increased by at least a factor of two. It is demonstrated that optimization of key device parameters of the DeMOS transistor enhances the maximum clock frequency to more than 1 GHz while preserving the device breakdown voltage and duty cycle of the level shifted signal." @default.
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- W1992170744 date "2013-11-01" @default.
- W1992170744 modified "2023-09-26" @default.
- W1992170744 title "Device–Circuit Co-design for Beyond 1 GHz 5 V Level Shifter Using DeMOS Transistors" @default.
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- W1992170744 doi "https://doi.org/10.1109/ted.2013.2283421" @default.
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