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• W1992177691 abstract "Si/SnSe2 multilayer films with different thickness of Si layers and monolayer SnSe2 film were prepared by radio-frequency magnetron sputtering system. X-Ray diffraction analysis revealed the change of phase structure with annealing temperature for the Si/SnSe2 multilayer films and SnSe2 films. It showed the inserting Si layers restrained the crystallization of SnSe2. The results of cross-sectional transmission electron microscopy confirmed the multilayer structure with clear interfaces between Si and SnSe2 layers. The Si/SnSe2 multilayer films showed high crystalline resistance and their 10-year data retention temperature reached 83°C. The low activation energy and the high crystalline resistance would contribute to the reduction of power consumption in practical applications." @default.
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• W1992177691 date "2012-01-01" @default.
• W1992177691 modified "2023-09-25" @default.
• W1992177691 title "Si/SnSe₂ Multilayer Films for Phase Change Memory Applications" @default.
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• W1992177691 doi "https://doi.org/10.1080/10584587.2012.741363" @default.
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