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- W1992201800 abstract "The effect of incorporated C on preventing the diffusion of B in selectively grown Si1-x-yGexCy layers has been studied. The diffusivity of B was significantly decreased by increasing the C content, even when the concentrations of B were high. Furthermore, self-aligned SiGeC heterojunction bipolar transistors (HBTs) were fabricated, and the effects of incorporating C in the base layer on device performance were evaluated. A shallower base with a higher concentration of B was produced by suppression the B outdiffusion. Consequently, low values for base resistance and a high cutoff frequency of 168 GHz were achieved with a 4-nm-thick p-Si1-x-yGexCy layer where the C content was 0.2% and the B concentration was 1×1020 cm-3." @default.
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- W1992201800 date "2003-04-30" @default.
- W1992201800 modified "2023-10-14" @default.
- W1992201800 title "Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs" @default.
- W1992201800 doi "https://doi.org/10.1143/jjap.42.2359" @default.
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