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- W1992206585 abstract "p-n junctions have been formed in CuInS2 by diffusing an n layer into p-type bulk material. When tested as photovoltaic detectors, typical diodes exhibit a maximum quantum efficiency of ∼15% near 0.8 μm." @default.
- W1992206585 created "2016-06-24" @default.
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- W1992206585 date "1979-07-01" @default.
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- W1992206585 title "Photovoltaic properties of<i>p</i>‐<i>n</i>junctions in CuInS<sub>2</sub>" @default.
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