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• W1992239471 abstract "The performance of a nip microcrystalline silicon (μc-Si) solar cell was improved by “alternately deposition and hydrogen plasma treatment method (ADHT)” at n/i interface. The defect densities measured by static capacitance-voltage (C-V) was decreased from 2.37×1016 cm−3 to 1.25 ×1016 cm−3. The short-circuit current Jsc was improved from 14.5 mA/cm2 to 17.2 mA/cm2 on bared stainless steel substrate and Obtained 24.7 mA/cm2 on a.BR substrates." @default.
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• W1992239471 date "2011-06-01" @default.
• W1992239471 modified "2023-09-24" @default.
• W1992239471 title "Improvement of microcrystalline silicon N-I-P solar cell by hydrogen plasma treatment for n/i interface" @default.
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• W1992239471 doi "https://doi.org/10.1109/pvsc.2011.6186048" @default.
• W1992239471 hasPublicationYear "2011" @default.
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