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- W1992292261 abstract "Abstract Polycrystalline and homogeneous Cr x Ti 1− x O 2 thin films were deposited on silicon (Si) substrates and on indium doped tin oxide (ITO) coated glass substrates by spin coating technique. We report the p-type conductivity in Cr x Ti 1− x O 2 thin films ( x = 0.005, 0.05, 0.1, 0.15, 0.2) and variable turn-on voltages ( V O ) in heterojunction ZnO-nanorod/Cr x Ti 1− x O 2 /ITO bipolar device. Results showed that V O varies substantially from ∼0.8 V ( x = 0.005) to ∼0.53 ( x = 0.2) for the bipolar assembly. X-ray photoelectron spectroscopy (XPS) showed that chemical state of Ti is the +4 valence state and Cr remains in three different oxidation states of +3. XPS in the valence band region showed a shift in the binding energy towards the lower energy side with increasing Cr intake confirming more p-type conductivity in Cr x Ti 1− x O 2 thin films." @default.
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- W1992292261 date "2010-11-01" @default.
- W1992292261 modified "2023-10-18" @default.
- W1992292261 title "Heterojunction bipolar assembly with Cr Ti1−O2 thin films and vertically aligned ZnO nanorods" @default.
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- W1992292261 doi "https://doi.org/10.1016/j.matchemphys.2010.07.040" @default.
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