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- W1992292969 abstract "InGaAs-OI and GeOI SRAM cells using optimized threshold voltage (Vt) design to enhance the intrinsic variation immunity of high-performance (super-threshold) and low-voltage (near-/sub-threshold) 6T SRAM cells are presented. For low-voltage SRAMs operating at low Vdd, low-Vt design shows smaller variability while the design trade-off between performance and leakage should be considered. For high-performance SRAMs operating at high Vdd, high-Vt design shows smaller variability. Moreover, compared with the SOI SRAMs with high-Vt design, InGaAs-OI/GeOI hetero-channel SRAM cells with high-Vt design exhibit improved Read/Write stability and performance, and maintain comparable RSNM variations for the high-performance SRAM applications." @default.
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- W1992292969 date "2012-09-01" @default.
- W1992292969 modified "2023-10-14" @default.
- W1992292969 title "Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells" @default.
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- W1992292969 doi "https://doi.org/10.1109/essderc.2012.6343337" @default.
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