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• W1992313456 abstract "Vertically-aligned InP nanowires are grown by metalorganic chemical vapor deposition (MOCVD) without the use of a deposited metal catalyst. A surface reconstruction induces indium droplets to form on the surface and thus act as nucleation sites for nanowire growth. Vertical growth from the InP(111)B substrate along with transmission electron microscopy (TEM) analysis indicate epitaxial growth from the substrate in the [111]B direction. A uniform cross section along the longitudinal axis can be achieved by optimizing the input V∕III ratio. Small variations in the diameter and length are seen under optimal growth conditions." @default.
• W1992313456 created "2016-06-24" @default.
• W1992313456 creator A5069405589 @default.
• W1992313456 creator A5078536657 @default.
• W1992313456 date "2005-11-10" @default.
• W1992313456 modified "2023-10-17" @default.
• W1992313456 title "Vertically aligned, catalyst-free InP nanowires grown by metalorganic chemical vapor deposition" @default.
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• W1992313456 doi "https://doi.org/10.1063/1.2131182" @default.
• W1992313456 hasPublicationYear "2005" @default.
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