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• W1992529265 abstract "Non-volatile memory cells using Co-doped BaTiO3 as an active layer exhibit high-performance unipolar resistive switching characteristics, with a resistance ratio over 104, retention time longer than 7 × 104 s, endurance over 105 cycles, and switching speed less than 10 ns/70 ns for SET/RESET. Under high electric field and large Joule heating, the easily varied valence of Co ions, the pre-existing oxygen vacancies with sufficiently high density, and the local itinerant electrons introduced by the Co-doping all favor the local metal-insulator phase transition and therein the formation/rupture of conductive filaments, contributing to the stable resistive switching." @default.
• W1992529265 created "2016-06-24" @default.
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• W1992529265 date "2011-02-15" @default.
• W1992529265 modified "2023-10-02" @default.
• W1992529265 title "High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3" @default.
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• W1992529265 doi "https://doi.org/10.1002/adma.201004306" @default.
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