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- W1992828735 abstract "Further evidence for a reversible high-temperature surface-disordering phase transition at ∼1060 K on Ge(111) has been found using Ge 3p X-ray photoelectron diffraction (a short-range order probe of surface structure that is sensitive to the first 3–5 spheres of neighbors) and photoelectron holography (a recently suggested direct 3D imaging technique). Azimuthal diffraction data at takeoff angles of θ = 19° (including nearest-neighbor forward-scattering directions and yielding high surface sensitivity) and θ = 55° (for which second-nearest-neighbor forward-scattering directions and more bulk sensitivity are involved) show abrupt drops in intensity of ∼30%–40% over the temperature interval of 900–1200 K. Photoelectron holographic near-neighbor images at temperatures both below and above the transition region furthermore indicate an identical near-neighbor structure for all atoms present in ordered sites. These combined diffraction and holography data show that by 1200 K, the Ge(111) surface is covered by a completely disordered overlayer of 2.0–2.5 Ge monolayers in thickness. The rate of growth of this overlayer with increasing temperature is also in excellent agreement with recent medium-energy ion scattering results, although the thicknesses we find for the overlayer are 1.5–2.0 times larger. A more detailed analysis of the θ = 19° and the θ = 55° data also suggests the possible presence of a partially disordered interface between the liquid-like overlayer and the bulk, also of 2 Ge monolayers in thickness and consisting of laterally strained domains." @default.
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- W1992828735 date "1993-02-01" @default.
- W1992828735 modified "2023-10-03" @default.
- W1992828735 title "Photoelectron diffraction and photoelectron holography study of a Ge(111) high-temperature surface phase transition" @default.
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- W1992828735 doi "https://doi.org/10.1016/0039-6028(93)90640-6" @default.
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