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• W1992886257 abstract "The morphology of Si films grown on Ge(100) by synchrotron-radiation-excited atomic layer epitaxy from Si2H6 was found to changes from two-dimensional to islands at the threshold temperature for the onset of H2 desorption. In contrast, films grown by synchrotron-radiation-excited chemical vapor deposition with a pressure of 1.3 × 10−3 Torr and at temperatures up to 530°C, were found to be two-dimensional films because of the hydrogen-surfactant effect. The limited thickness of the epitaxial layer before nucleating amorphous was more than 100Åat 230°C. Below 400°C the Si/Ge interface was very abrupt. Above 500°C Si atoms interdiffused significantly into the Ge substrate but the Ge tail in the Si overlayer was sharply cut off." @default.
• W1992886257 created "2016-06-24" @default.
• W1992886257 creator A5024064783 @default.
• W1992886257 date "1997-04-01" @default.
• W1992886257 modified "2023-09-27" @default.
• W1992886257 title "Evaluation of thin Si films grown on Ge (1 0 0) by synchrotron-radiation-excited atomic layer epitaxy and chemical vapor deposition from Si 2 H 6" @default.
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• W1992886257 doi "https://doi.org/10.1016/s0022-0248(96)01042-1" @default.
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