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- W1992912102 abstract "The electrochemical behavior of as-deposited, electrochemically oxidized and oxygen plasma-treated semiconducting polycrystalline diamond films was examined. The AD surface was much more active than the oxidized surfaces for solvent discharge reactions (H2 and O2 evolution) as well as for electron transfer involving the ferro/ferricyanide couple. The capacitance as a function of potential was used to calculate acceptor concentration profiles, which showed an enriched layer of approximately 15 nm in depth for the as-deposited surface, possibly due to loosely bound hydrogen. These additional carriers appear to enhance electron transfer rates." @default.
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- W1992912102 date "2001-09-01" @default.
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- W1992912102 title "Relationships between surface character and electrochemical processes on diamond electrodes: dual roles of surface termination and near-surface hydrogen" @default.
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- W1992912102 doi "https://doi.org/10.1016/s0925-9635(01)00453-8" @default.
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