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W1992946494 abstract "Active and Non-Active Gate Drives (AGDs and NAGDs) are known for managing switching characteristics of silicon (Si) and silicon carbide (SiC) power semiconductors. As SiC adoption has grown, the need for intelligent gate drives which are capable of managing the dynamics associated with the fast-switching characteristics of these devices has become apparent. To propose a solution for managing driven and post-driven dynamic behavior, this paper first studies the most recent AGD solutions for silicon power semiconductors with focus on closed loop schemes. The study is continued by reviewing available AGD and NAGD solutions for silicon carbide power semiconductors concentrating on the SiC JFET. Oscillatory modes which can be observed in application circuits based on SiC devices are discussed, and an AGD design example is proposed for improving the final dynamic response of such circuits. The active gate drive design example is constructed, and both simulated and empirical results are shown to substantially reduce the occurrence of natural and forced oscillations at turn-off of the SiC JFET." @default.
W1992946494 created "2016-06-24" @default.
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W1992946494 date "2013-03-01" @default.
W1992946494 modified "2023-10-16" @default.
W1992946494 title "Active gate drive solutions for improving SiC JFET switching dynamics" @default.
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W1992946494 doi "https://doi.org/10.1109/apec.2013.6520683" @default.
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