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• W1992978158 abstract "We report results of first-principles calculations in terms of which we elucidate the mechanisms for nucleation and initial growth of pentacene films on Si. Pentacene molecules bond in flat, distorted configurations on bare surfaces. On H-passivated surfaces, direct bonding or H replacement are not energetically favored. However, molecules bond in an upright configuration at isolated depassivated Si dangling bonds and film growth continues over the passivated area. The results elucidate generic adsorption issues on inert surfaces and suggest procedures for controlling film growth." @default.
• W1992978158 created "2016-06-24" @default.
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• W1992978158 date "2005-11-29" @default.
• W1992978158 modified "2023-10-14" @default.
• W1992978158 title "Atomic-scale mechanisms of selective adsorption and dimerization of pentacene on Si surfaces" @default.
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• W1992978158 doi "https://doi.org/10.1063/1.2139989" @default.
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