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- W1992987595 abstract "n-type-δ-doping layers in GaAs prepared by molecular beam epitaxy are characterized by magnetotransport measurements at 2 K up to 43 T. Shubnikov-de Haas measurements on the magnetoresistance give evidence of three electric subbands, having respectively the populations 3.6; 1.18 and 0.48x10 12 cm -2 . The measured electronic concentrations account for 90% of the total Silicon donors introduced during the growth. In addition, the doping layer thickness is estimated equal to 30 A. Low field magnetotransport measurement enable to derive the subbands mobility values found respectively equal to 780; 5 200 and 8 200 cm 2 /V.s. Finally, the quantum Hall effect is shown for the first time in a 2 DEG having a mobility value below 1 000 cm 2 /V.s Un gaz bidimensionnel d'electrons, obtenu par dopage au silicium dans le plan (100) durant la croissance epitaxiale par jet moleculaire de GaAs, est caracterise a 2 K par l'etude de l'effet Hall et de la magnetoresistance jusqu'a 43 T. Lorsque le champ magnetique est perpendiculaire au plan (100), trois sous-bandes electriques, avec des concentrations respectives de 3,6; 1,18 et 0,48x10 12 cm -2 sont revelees experimentalement. Elles rendent compte de 90 % de la population des atomes de silicium et presentent des mobilites de 780; 5 200 et 8 200 cm 2 /V.s. Une epaisseur de la couche egale a 300A a pu etre calculee. Lorsque le champ magnetique est parallele au plan de la couche, la magnetoresistance donne une signature des sous-bandes electriques qui revele une quatrieme sous-bande peuplee. Enfin, l'effet Hall quantique est mis en evidence pour la premiere fois dans un systeme electronique de mobilite inferieure a 1 000 cm 2 /V.s" @default.
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- W1992987595 date "1989-01-01" @default.
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- W1992987595 title "Caractérisation par magnétotransport d'une couche électronique bidimensionnelle dans une structure GaAs à dopage Si dans un plan (100)" @default.
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- W1992987595 doi "https://doi.org/10.1051/rphysap:0198900240103100" @default.
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