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• W1993043371 abstract "In this work, we demonstrated a simple fabrication route towards an optically transparent and flexible memory device. The device is simple and consists of a metal/insulator/semiconductor structure; namely MIS. The preliminary MIS study with gold nanoparticles embedded between the polymethylsilsesquioxane layers was fabricated on p-Si substrate and the capacitance versus voltage measurements confirmed the charge trapped capability of the fabricated MIS memory device. Subsequently, an optically transparent and flexible MIS memory device made from indium–tin-oxide coated polyethylene terephthalate substrate and pentacene was used to replace the opaque p-Si substrate as the active layer. Current versus voltage (I–V) plot of the transparent and flexible device shows the presence of hysteresis. In an I–V plot, three distinct regions have been identified and the transport mechanisms are explained. The fabricated optically transparent and mechanically flexible MIS memory device can be programmed and erased multiple times, similar to a flash memory. Mechanical characterization to determine the robustness of the flexible memory device was also conducted but failed to establish any relationship in this preliminary work as the effect was random. Hence, more work is needed to understand the reliability of this device, especially when they are subjected to mechanical stress." @default.
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• W1993043371 date "2013-10-01" @default.
• W1993043371 modified "2023-10-17" @default.
• W1993043371 title "An optically transparent and flexible memory with embedded gold nanoparticles in a polymethylsilsesquioxane dielectric" @default.
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• W1993043371 doi "https://doi.org/10.1016/j.tsf.2012.12.059" @default.
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