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- W1993154306 abstract "Nanometer-scale gaps in Pd strips are obtained by hydrogen absorption under high pressure treatment. The resulting lattice constant increase due to the Pd phase transformation after hydrogen uptake results in a large compressive stress on the thin Pd films. Under proper geometric arrangement of the Pd electrode within a surface conduction electron (SCE) emitter structure, a single nanogap per SCE device is obtained. A turn-on voltage of 41V is observed for emitters with a 25nm gap." @default.
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- W1993154306 date "2007-04-16" @default.
- W1993154306 modified "2023-10-15" @default.
- W1993154306 title "Nanogap formation by palladium hydrogenation for surface conduction electron emitters fabrication" @default.
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- W1993154306 doi "https://doi.org/10.1063/1.2728761" @default.
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