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- W1993167369 abstract "Abstract We investigated the growth of a SiN x C y dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low- k substrate was repeatedly exposed to bis(dimethylamino)dimethylsilane (BDMADMS) and a hydrogen plasma. A SiN x C y sealing layer grown by PE-ALD was formed without any penetration of the pores within the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material." @default.
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- W1993167369 date "2015-01-01" @default.
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- W1993167369 title "The formation of a dielectric SiN C sealing layer using an atomic layer deposition technique" @default.
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- W1993167369 doi "https://doi.org/10.1016/j.mssp.2014.01.016" @default.
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