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• W1993208071 abstract "The effects of Mg-containing precursor flow rate on the characteristics of the Mg-doped GaN (GaN:Mg) were systematically studied in this study. The GaN:Mg films were deposited on sapphire substrates by metal-organic chemical-vapor deposition (MOCVD) with various flow rates of 25, 50, 75 and 100 sccm of bis-(cyclopentadienyl)-magnesium (Cp2Mg) precursor. The structural, electrical and nanomechanical properties of GaN:Mg thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), Hall measurement and nanoindentation techniques, respectively. Results indicated that GaN:Mg films obtained with 25 sccm Cp2Mg possess the highest hole concentration of 3.1 × 1017 cm−3. Moreover, the hardness and Young's modulus of GaN:Mg films measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option showed positive dependence with increasing flow rate of Cp2Mg precursor, presumably due to the solution hardening effect of Mg-doping." @default.
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• W1993208071 date "2012-10-01" @default.
• W1993208071 modified "2023-10-18" @default.
• W1993208071 title "Influence of Mg-containing precursor flow rate on the structural, electrical and mechanical properties of Mg-doped GaN thin films" @default.
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• W1993208071 doi "https://doi.org/10.1016/j.matchemphys.2012.07.060" @default.
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