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- W1993245678 abstract "Atomic layer deposition (ALD) offers a method for sidewall growth due to its ability to deposit isotropic thin films. As a first step to provide underlying growth templates on sidewalls, proof-of-principal depositions were made on flat wafer surfaces using ALD Pt thin films deposited on: ALD HfO2, ALD Al2O3, and oxidized sputtered-Ti films. X-ray diffraction rocking curve full-width half maxima for 25 nm Pt films obtained after a rapid thermal anneal at 700 °C were 2.06°, 5.45°, and 7.84° on the TiO2, Al2O3, and HfO2 coatings, respectively. Sheet resistance decreased with Pt thickness (deposited onto TiO2/SiO2/Si): from 5 Ω/□ at 25 nm to 0.63 Ω/□ at 100 nm. A 500 ± 25 nm PbZr0.52Ti0.48O3 film was deposited by a chemical solution deposition process onto 100 nm ALD Pt films deposited on the TiO2/SiO2/Si substrates. The 001 Lotgering factor derived from x-ray diffraction data was 0.56 for 001/100 oriented PbZr0.52Ti0.48O3." @default.
- W1993245678 created "2016-06-24" @default.
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- W1993245678 date "2011-12-02" @default.
- W1993245678 modified "2023-10-16" @default.
- W1993245678 title "Atomic layer deposition of Pt growth template for orienting PbZr<i>x</i>Ti1−<i>x</i>O3 thin films" @default.
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- W1993245678 doi "https://doi.org/10.1116/1.3664766" @default.
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