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- W1993366812 abstract "We demonstrated fabrication of Cu-TSV using all-wet process, which has a high potential to apply for the via-last Cu-TSV process. A Co-W alloy diffusion barrier layer was formed on SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layer by electroless plating at 60 °C with Pd nanoparticle catalyst. The barrier layer was thin and continuous throughout a 2 φ × 24 μm TSV and its adhesion strength on SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> was as high as that of PVD-Ta. The Co-W alloy layer has undergone an interdiffusion test, which showed a high resistance against Cu diffusion into SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layer. Then, seed layer was formed by electroless Cu deposition on the Co-W alloy layer through displacement reaction. These results reveal a feasibility of all-wet fabrication in a high aspect ratio TSV process." @default.
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- W1993366812 date "2012-05-01" @default.
- W1993366812 modified "2023-10-16" @default.
- W1993366812 title "All-wet Cu-filled TSV process using electroless Co-alloy barrier and Cu seed" @default.
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- W1993366812 doi "https://doi.org/10.1109/ectc.2012.6248926" @default.
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