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- W1993426411 abstract "Dimethylethylamine alane (DMEAA) has been used as an Al precursor for the growth of AlGaAs alloys and AlGaAs/GaAs quantum wells by metalorganic molecular beam epitaxy (MOMBE). It is shown that DMEAA is a very convenient source in terms of in situ calibration of growth rates and alloy composition by reflection high-energy electron diffraction. As indicated by secondary ion mass spectroscopy, low residual O and C impurity content is obtained by using this source. GaAs quantum well structures have been characterized by photoluminescence spectroscopy and compared to equivalent structures grown by standard solid-source molecular beam epitaxy. They are also compared with the results recently reported in the literature for analogous structures grown by MOMBE using alternate aluminum sources." @default.
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- W1993426411 date "1994-08-15" @default.
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- W1993426411 title "AlxGa1−xAs/GaAs quantum well structures grown by metalorganic molecular beam epitaxy using dimethylethylamine alane" @default.
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- W1993426411 doi "https://doi.org/10.1063/1.112199" @default.
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