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W1993479841 abstract "In-plane birefringent porous Si (PSi) layers formed from heavily boron-doped (110) Si wafers are investigated by using polarization-resolved infrared absorption (IR) spectroscopy. The absorption by free charge carriers and by Si-Hx (x = 1, 2, 3) surface bond vibrations are found to exhibit strong anisotropy (dichroism), which originates from the form anisotropy of Si nanocrystals assembling (110) PSi layers. The free carrier absorption dichroism is explained by using the effective medium approximation and classical Drude model and considering additional carrier scattering in anisotropically shaped Si nanocrystals. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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W1993479841 date "2005-06-01" @default.
W1993479841 modified "2023-10-18" @default.
W1993479841 title "Anisotropy of infrared absorption in (110) porous silicon layers" @default.
W1993479841 doi "https://doi.org/10.1002/pssc.200461221" @default.
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