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• W1993499075 abstract "In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10-3–10-4 and small cell size of 5 F2. In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications." @default.
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• W1993499075 date "2006-02-08" @default.
• W1993499075 modified "2023-09-26" @default.
• W1993499075 title "Comprehensively Study on a Ballistic-Injection AND-type Flash Memory Cell" @default.
• W1993499075 doi "https://doi.org/10.1143/jjap.45.674" @default.
• W1993499075 hasPublicationYear "2006" @default.
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