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• W1993635562 abstract "We have designed and fabricated a 64 channel optical module using a self-alignment flip-chip packaging technique for 2D GaAs epitaxial-side emitting vertical-cavity surface- emitting laser (VCSEL) array mounting without substrate removal on Si subcarrier. Light emission is obtained through a wet-chemically etched window in the Si subcarrier. The 2D independently addressable selectively oxidized GaAs laser array is arranged in an 8 X 8 matrix with a device pitch of 250 micrometers and each laser is supplied with two individual top contacts. This metallization scheme allows flip-chip mounting junction-side down on Si subcarrier. The VCSEL array chip is placed above the window in the Si subcarrier and is assembled using a self-aligned bonding technique with PbSn solder bumps. Arrays with 4 micrometers active diameter investigated before and after packaging show quite homogeneous optical and electrical continuous wave output characteristics exhibiting threshold currents of less than 1.1 mA and single-mode output powers of 2 mW. Driving characteristics of the lasers in the array are fully compatible to advanced 3.3 V CMOS technology. The modules are used to demonstrate free-space directional transmission applying beam steering." @default.
• W1993635562 created "2016-06-24" @default.
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• W1993635562 date "1999-04-29" @default.
• W1993635562 modified "2023-10-02" @default.
• W1993635562 title "64-channel flip-chip-mounted selectively oxidized GaAs VCSEL array for parallel optical interconnects" @default.
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• W1993635562 doi "https://doi.org/10.1117/12.347096" @default.
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