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- W1993663433 abstract "This paper presents the preparation and investigation of structure and electrical properties of nanostructures consisting of Si 1−x Ge x nanocrystals. Nanostructures were prepared by RF magnetron sputtering, followed by thermal annealing. X-ray diffraction, TEM, high resolution TEM and SAED measurements were performed. Current-voltage and current-temperature characteristics were taken. Nanostructures have different electrical behavior. Current-voltage curves are linear, while current-temperature curves are dependent on the annealing temperature. In films annealed at 650°C, electrical transport is controlled by quantum confinement effect and localized states (current-temperature characteristics), while in films annealed at 900°C it is controlled by tunneling of thermally activated carriers between neighboring nanocrystals." @default.
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- W1993663433 date "2011-10-01" @default.
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- W1993663433 title "Preparation and electrical characterization of SiGe nanostructures" @default.
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- W1993663433 doi "https://doi.org/10.1109/smicnd.2011.6095710" @default.
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