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• W1993664516 abstract "A method for fabricating self-aligned bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs) with low parasitic capacitance by utilizing backside excimer-laser irradiation through a substrate is proposed and experimentally validated. Irradiation from the backside of the glass substrate using gate electrode as a mask reduces resistance of the IGZO film selectively for their application as source/drain regions in bottom-gate IGZO-TFTs. This method offers a wide process margin with respect to laser energy density and is applicable to large-area processing." @default.
• W1993664516 created "2016-06-24" @default.
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• W1993664516 date "2013-09-30" @default.
• W1993664516 modified "2023-09-26" @default.
• W1993664516 title "Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate" @default.
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• W1993664516 doi "https://doi.org/10.1063/1.4824301" @default.
• W1993664516 hasPublicationYear "2013" @default.
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