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• W1993695440 abstract "Improvement in the electrical properties of the GaAs surface has been accomplished using a room-temperature hydrogen sulfide plasma. The surface has then been protected by a 300 °C plasma enhanced chemical vapor deposition (PECVD) SiO2 film. This treatment is highly reproducible due to computer control of process parameters and long-lasting due to the SiO2 cap. Improved C-V characteristics were observed, showing interface trap densities in the high 1011 cm−2 eV−1 range. Photoluminescence (PL) measurements on the sulfided samples showed increased intensity over the untreated samples." @default.
• W1993695440 created "2016-06-24" @default.
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• W1993695440 date "1992-02-10" @default.
• W1993695440 modified "2023-10-18" @default.
• W1993695440 title "Hydrogen sulfide plasma passivation of gallium arsenide" @default.
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• W1993695440 doi "https://doi.org/10.1063/1.106547" @default.
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