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• W1993756989 abstract "We report an experimental investigation of the deposition, optical characterization and electrical properties of 6H and 4H-SiC epitaxial layers grown by atmospheric pressure chemical vapor deposition in a home made ‘cold wall’ reactor. From a growth kinetic study performed using our deposition conditions (1 atm, 1700 K) we show that our results can be very well explained using a stagnant layer model. We also underline that the decrease of the growth efficiency for high molar fractions of silane comes from the occurrence of a gaseous phase nucleation. The electronic properties of the resulting layers have been studied by Hall effect measurements. The values of electrons mobility (900 cm2 Vs−1 for a low doped layer) compare well with those of other groups. Finally, Schottky diodes have been processed with good forward characteristics." @default.
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• W1993756989 date "2001-03-01" @default.
• W1993756989 modified "2023-09-25" @default.
• W1993756989 title "Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications" @default.
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• W1993756989 doi "https://doi.org/10.1016/s0921-5107(00)00659-0" @default.
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