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• W1993783863 abstract "In this paper, we describe the superiority of the titanium nitride (TiN) film formed by atomic layer deposition (ALD) using a tetrakis(dimethylamino)titanium (TDMAT) precursor for metal-gate electrodes of planar metal–oxide–semiconductor field-effect transistors (MOSFETs). It was demonstrated that the resistivity of the ALD TiN was significantly reduced by NH 3 post deposition annealing (PDA). The electrical characteristics of the ALD-TiN-gate MOS capacitors and planar MOSFETs were evaluated and compared with those of the physical-vapor-deposited (PVD) TiN. The performance of the ALD-TiN-gate cases was confirmed to be superior to that of the PVD-TiN-gate cases, which was explained by the lower interface trap density ( D it ) of the ALD TiN/SiO 2 gate stack." @default.
• W1993783863 created "2016-06-24" @default.
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• W1993783863 date "2010-04-01" @default.
• W1993783863 modified "2023-09-24" @default.
• W1993783863 title "Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor" @default.
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• W1993783863 doi "https://doi.org/10.1143/jjap.49.04da16" @default.
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