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• W1993799744 abstract "Al doped Sb2Te3 material was proposed to improve the performance of phase-change memory. Crystallization temperature, activation energy, and electrical resistance of the Al doped Sb2Te3 films increase markedly with the increasing of Al concentration. The additional Al–Sb and Al–Te bonds enhance the amorphous thermal stability of the material. Al0.69Sb2Te3 material has a better data retention (10 years at 110 °C) than that of Ge2Sb2Te5 material (10 years at 87 °C). With a 100 ns width voltage pulse, SET and RESET voltages of 1.3 and 3.3 V are achieved for the Al0.69Sb2Te3 based device." @default.
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• W1993799744 date "2011-10-01" @default.
• W1993799744 modified "2023-10-03" @default.
• W1993799744 title "Performance improvement of Sb2Te3 phase change material by Al doping" @default.
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• W1993799744 doi "https://doi.org/10.1016/j.apsusc.2011.07.072" @default.
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