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• W1993843383 abstract "Thin films of single crystal silicon are widely required in many applications of semiconductor devices and micro-electro-mechanical systems. In this study, molecular dynamics simulation is conducted to investigate the effect of notch depth on fracture strength. The specimen size is about 10 nm × 5 nm, and the periodic boundary condition is applied for thin films. The loading directions are [100], [110] and [111] direction. Brittle fracture occurs on the plane perpendicular to the loading direction. The stress intensity factor at the onset of the crack propagation increases with increasing notch depth. When the notch depth is longer than 2 nm, the stress intensity factor is nearly constant. At the onset of the crack propagation, the stress at the notch root becomes constant irrespective of the notch depth." @default.
• W1993843383 created "2016-06-24" @default.
• W1993843383 creator A5054749297 @default.
• W1993843383 creator A5071410528 @default.
• W1993843383 date "2006-05-26" @default.
• W1993843383 modified "2023-09-24" @default.
• W1993843383 title "Molecular dynamics analysis for fracture behaviour of single crystal silicon thin film with micro notch" @default.
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• W1993843383 doi "https://doi.org/10.1088/0965-0393/14/5/s09" @default.
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