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- W1993876184 abstract "We studied influence of SF6 plasma treatment on electrical parameters of AlGaN/GaN heterostructures by C-V, I-V and SIMS measurement. We found the C-V measurements as an effective tool that is able to help to analyze electrical manifestations of charge changes in heterostructures during the semiconductor processing. In contrary to previously published results we found out that for diminishing of the two-dimensional electron gas concentration in the channel layer positively charged ions implanted during the plasma treatment into the semiconductor and not F^- ions are responsible." @default.
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- W1993876184 date "2010-11-01" @default.
- W1993876184 modified "2023-10-18" @default.
- W1993876184 title "C–V characterization of SF6 plasma treated AlGaN/GaN heterostructures" @default.
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- W1993876184 doi "https://doi.org/10.1016/j.mee.2010.02.004" @default.
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