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• W1993891333 abstract "This report is on the deposition and characterization of highly resistive NbNx films for cryogenic planar resistors. Radio frequency (RF) sputtering of Nb in a N2/Ar mixture resulted in films with a temperature independent resistivity of 220 μΩ/cm for temperatures down to at least 2.3 K. Sheet resistances of 25 Ω/□ were obtained for films of 90 nm thickness, which implies that the application of even thicker films, is advantageous for step-edge coverage, thickness tolerances, and interface effects. The films are thermally stable up to 200°C and exhibit only minor surface oxidation. Both the film deposition and trimming, by reactive ion etching (RIE), will be described." @default.
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• W1993891333 date "2001-03-01" @default.
• W1993891333 modified "2023-09-26" @default.
• W1993891333 title "NbNx thin film resistors for cryogenic application" @default.
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• W1993891333 doi "https://doi.org/10.1016/s0040-6090(00)01863-0" @default.
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