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- W1993908500 abstract "Silicon carbide was chemically vapour deposited onto a carbon-carbon composite as a protec- tive outer layer for oxidation resistance. The growth and morphology of the silicon carbide was investigated and scanning electron microscopy showed the coating to be cracked owing to the thermal expansion mismatch. Nodular growth had occured with each nodule comprising fine faceted grains. Transmission electron microscopy revealed growth to have commenced as a microcrystalline layer. This developed into blocks of dendritic, spine-like crystals. Further from the interface the deposit consisted mainly of columnar grains with a layered structure. The layering was caused by microtwins and stacking faults on the {111} planes. There was also evidence of one-dimensionally disordered crystals." @default.
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- W1993908500 date "1991-07-01" @default.
- W1993908500 modified "2023-09-23" @default.
- W1993908500 title "The growth and morphology of chemically vapour deposited silicon carbide coatings on carbon-carbon composites" @default.
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- W1993908500 doi "https://doi.org/10.1016/0257-8972(91)90164-r" @default.
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