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- W1993936122 abstract "We investigate the electrical properties of Ti/Al ohmic contacts on -passivated N-face n-GaN:Si grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current–voltage measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at , while the untreated samples show some improvement although still nonohmic. Based on the and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN." @default.
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- W1993936122 date "2009-01-01" @default.
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- W1993936122 title "Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes" @default.
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- W1993936122 doi "https://doi.org/10.1149/1.3126529" @default.
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