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- W1993960253 abstract "A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5 <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML><mml:mrow><mml:mrow><mml:mtext>A</mml:mtext><mml:mo>/</mml:mo><mml:mrow><mml:msup><mml:mrow><mml:mtext>cm</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msup></mml:mrow></mml:mrow></mml:mrow></mml:math> current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100 <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML><mml:mrow><mml:mrow><mml:mtext>W</mml:mtext><mml:mo>/</mml:mo><mml:mrow><mml:msup><mml:mrow><mml:mtext>cm</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msup></mml:mrow></mml:mrow></mml:mrow></mml:math> conduction and the 100 <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML><mml:mrow><mml:mrow><mml:mtext>W</mml:mtext><mml:mo>/</mml:mo><mml:mrow><mml:msup><mml:mrow><mml:mtext>cm</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msup></mml:mrow></mml:mrow></mml:mrow></mml:math> turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV) and higher frequency (10 kHz) are needed." @default.
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- W1993960253 date "2008-07-01" @default.
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- W1993960253 title "Silicon Carbide Emitter Turn-Off Thyristor" @default.
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- W1993960253 doi "https://doi.org/10.1155/2008/891027" @default.
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