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- W1993987788 abstract "Capacitance-voltage method was used to analyze composition of the Si 1-x Ge x alloy films with a stochiometry gradient of Ge, which were epitaxially grown on Si (100) substrate by chemical vapor deposition. Using the capacitance characteristics of Si 1-x Ge x /Si obtained by applying a reserve bias to the Hg electrode probe, the contact barrier height for Hg/Si 1-x Ge x junction and Si 1-x Ge x /Si junction, and band gap of SSi 1-x Ge x were estimated respectively. With the band gap of Si 1-x Ge x , composition of Si 1-x Ge x in Hg/Si 1-x Ge x junction and Si 1-x Ge x /Si junction were further obtained. Because analyzed Si 1-x Ge x was formed through bilateral inter-diffusion of Si into the epilayer and Ge into the substrate during the deposition, Ge distribution from surface to substrate in Si 1-x Ge x alloy films can be figured out by fitting to diffusion exponential function. The Ge distribution acquired this way was in accordance with the depth profile by auger electron spectrum." @default.
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- W1993987788 date "2011-11-01" @default.
- W1993987788 modified "2023-09-25" @default.
- W1993987788 title "Composition Analysis of Ge Graded Si<sub>1-x</sub>Ge<sub>x</sub> Alloy Films by Capacitance-Voltage Method" @default.
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- W1993987788 doi "https://doi.org/10.4028/www.scientific.net/amr.383-390.7613" @default.
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