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- W1993996814 abstract "Photoelectric emission, contact potentials and surface photovoltages have been measured on clean, cleaved {110} surfaces of n-and p-type GaAs between 77°K and 350°K. Room-temperature work-function values depend on bulk doping and range from 4.70 eV to 5.53 eV. Ionization energy is in agreement with values reported by Gobeli and Allen. P-type samples show no band bending, no surface photovoltage and small temperature-dependence of the work function. N-type samples show large band bending (0.8 eV at room temperature in the dark) that depends strongly on illumination and temperature. Surface photovoltage is due to interband transitions in the bulk. Results are interpreted in terms of a band of surface acceptors with a density of at least 2 × 1013 cm−2 eV−1 at a lower band-edge which lies 0.85 eV below the conduction band edge." @default.
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- W1993996814 date "1971-07-01" @default.
- W1993996814 modified "2023-09-27" @default.
- W1993996814 title "Electronic properties of clean cleaved {110} GaAs surfaces" @default.
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- W1993996814 doi "https://doi.org/10.1016/0039-6028(71)90018-5" @default.
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