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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1994011686> ?p ?o ?g. }

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• W1994011686 abstract "Bias stress measurements at different temperatures and stress voltage have been performed on a-Si:H thin-film transistors, where very thin (18 nm) plasma deposited a-SiO2 was used as gate insulator. The data are explained on the basis of dispersive charge injection into the first 2–3 nm of the gate insulator. According to the proposed model a new functional form for the threshold voltage shift kinetics is deduced and a very good agreement with the experimental data is found." @default.
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• W1994011686 date "1991-08-12" @default.
• W1994011686 modified "2023-10-08" @default.
• W1994011686 title "Dispersive charge injection model for hydrogenated amorphous silicon/amorphous silicon dioxide thin-film transistor instability" @default.
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• W1994011686 doi "https://doi.org/10.1063/1.105275" @default.
• W1994011686 hasPublicationYear "1991" @default.
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