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• W1994047172 abstract "n -Type β-FeSi2/intrinsic-Si/p-type Si heterojunctions, prepared by facing-targets direct-current sputtering, were evaluated as near-infrared photodetectors. The built-in potential was estimated to be approximately 1 V from capacitance-voltage characteristics. Diodes with a junction area of 0.03 mm2 exhibited a junction capacitance of 4.4 pF at zero bias. At room temperature, the devices exhibited responsivity of 140 mA/W and external quantum efficiency of 13% at a bias voltage of −5 V. The detectivity at zero bias was estimated to be 2.8×109 cm√Hz/W at the wavelength of 1.31 μm. These results indicate their high application potential as near-infrared photodiodes integrated with Si." @default.
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• W1994047172 date "2009-10-19" @default.
• W1994047172 modified "2023-10-02" @default.
• W1994047172 title "n -type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature" @default.
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• W1994047172 doi "https://doi.org/10.1063/1.3250171" @default.
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