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- W1994058662 abstract "Abstract An experimental procedure, which maintains an almost constant electric field at the insulator-silicon interface, is used to study the trapping of electrons injected into the Aluminum-oxide gate insulator of a MISFET structure. A simple model, consisting of a finite number of traps, located at or adjacent to the insulator-silicon interface is consistent with the experimental observations. Additional experiments in which the insulator current is measured directly allow the capture parameter of these traps to be calculated." @default.
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- W1994058662 date "1980-02-01" @default.
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- W1994058662 title "A study of charge trapping in the Al-Al2O3-Si, MIS system" @default.
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- W1994058662 doi "https://doi.org/10.1016/0038-1101(80)90143-4" @default.
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