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- W1994154231 abstract "MBE growth and IR device fabrication with epitaxial IV-VI layers on Si-substrates is reviewed and some new results are included. Epitaxy is achieved using a stacked BaF<SUB>2</SUB>/CaF<SUB>2</SUB> or CaF<SUB>2</SUB> buffer layer. While photolithographic delineation techniques are somewhat difficult with BaF<SUB>2</SUB> (which is soluble in water), reliable wet-etching techniques are easy with the CaF<SUB>2</SUB> buffer. Photovoltaic IV-VI sensors on Si(111) substrates are fabricated with cut-off wavelengths covering the whole atmospheric 3 - 5 and 8 - 14 micrometers window. They offer the possibility for low cost IR focal plane arrays with sensitivities similar to MCT, but with much less demanding material processing steps." @default.
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- W1994154231 date "1993-12-07" @default.
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- W1994154231 title "<title>Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications</title>" @default.
- W1994154231 doi "https://doi.org/10.1117/12.164936" @default.
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