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- W1994161854 abstract "Photostable hydrogenated amorphous-silicon films have been deposited by disilane decomposition in a quartz reactor 2 m in length and 5 in. in diameter. A deposition temperature of around 420 degree(s)C, pressure in the interval of 5 to 10 Torr, and gas holding time around 250 sec are the most appropriate parameters to deposit fairly good quality films having density states ranging from 10 16 to 10 17 cm -3 eV -1 and Urbach's tail from 70 meV to 100 meV." @default.
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- W1994161854 date "1992-02-01" @default.
- W1994161854 modified "2023-09-23" @default.
- W1994161854 title "Photostable amorphous-silicon films by low-pressure chemical vapour deposition" @default.
- W1994161854 doi "https://doi.org/10.1117/12.56990" @default.
- W1994161854 hasPublicationYear "1992" @default.
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