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• W1994328762 abstract "Fully amorphous pn-heterodiodes consisting of n-type zinc-tin oxide and p-type zinc-cobalt oxide are discussed. All fabrication steps are conducted at room-temperature except two baking steps within the photolithography for 90 s at 90 °C. Rectifications as high as six orders of magnitude are achieved and the ideality factors are between 1.2 and 2, depending on the diode design." @default.
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• W1994328762 date "2015-01-15" @default.
• W1994328762 modified "2023-10-08" @default.
• W1994328762 title "All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals" @default.
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• W1994328762 doi "https://doi.org/10.1002/aelm.201400023" @default.
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