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• W1994439166 abstract "In situ electrical resistivity measurement of powdered Mg2Si has been performed in a diamond anvil cell up to 25.4 GPa. At about 22.2 GPa, Mg2Si underwent a pressure-induced semiconductor–metal phase transition that took place in the Ni2In-type structure rather than the anti-fluorite structure predicted theoretically. The other phases (anti-fluorite and anti-cotunnite) belong to the semiconductor phase." @default.
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• W1994439166 date "2012-03-01" @default.
• W1994439166 modified "2023-10-12" @default.
• W1994439166 title "Pressure-induced semiconductor–metal phase transition in Mg2Si" @default.
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• W1994439166 doi "https://doi.org/10.1016/j.ssc.2011.11.043" @default.
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